N0434N Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING

N0434N
Package Drawing (Unit: mm)
TO-262
10.0±0.3
4
4.8 MAX.
1.3±0.2
Chapter Title
1.47±0.2
2.54
1.27±0.2
0.8±0.1
1 23
2.4±0.2
0.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0556EJ0100 Rev.1.00
Nov 07, 2011
Page 6 of 6