N0434N Datasheet, PDF (5/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING

N0434N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
5
4
3
2
1
0
-50
VGS = 10 V
ID = 50 A
Pulsed
0
50
100
150
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
10
tr
1
0.1
1
VDD = 20 V
VGS = 10 V
RG = 0 Ω
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4
0.8
1.2
1.6
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
100
VGS = 0 V
f = 1.0 MHz
10
0.1
1
Crss
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
14
12
VDD = 8 V
10
20 V
32 V
8
6
4
2
ID = 100 A
0
0 20 40 60 80 100 120
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
0.1
VGS = 0 V
di/dt = 100 A/µs
1
10
100
I_F - Diode Forward Current - A
R07DS0556EJ0100 Rev.1.00
Nov 07, 2011
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