HAT2267H_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switch

HAT2267H
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I_D = 2 A, 5 A, 10 A
V_GS = 6 V
20
2 A, 5 A, 10 A
10
V_GS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3 1
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 25 A
V_GS
80 V_DD = 40 V
16
25 V
10 V
60
12
V_DS
40
8
20
V_DD = 40 V
4
25 V
10 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
75°C
10
25°C
3
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
300
Switching Characteristics
V_GS = 10 V, V_DS = 30 V
R_G = 4.7 Ω, duty ≤ 1 %
100
30
10 ^td(on)
3
td(off)
tr
tf
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Rev.4.00 Jul 05, 2006 page 4 of 7