HAT2267H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switch

HAT2267H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.7 V
4.5 V ^{Pulse Test}
4.3 V
40
5.3 V
10 V
30
4.1 V
20
3.9 V
10
V_GS = 3.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I_D = 10 A
100
5A
50
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.4.00 Jul 05, 2006 page 3 of 7
Maximum Safe Operation Area
1000
10 µs
100
10
1
Operation in
this area is
DC _Opera^P_ti^W_on⁼_Tc110₌^mm₂^s₅¹_s°⁰_C^{0 µs}
0.1 ^{limited by R}DS(on)
Ta = 25°C
0.01 ^{1 shot Pulse}
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
30
V_GS = 6 V
10
10 V
3
1
13
Pulse Test
10 30 100 300 1000
Drain Current I_D (A)