HAT2266H_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2266H
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
24
I_D = 2,5,10 A
16
V_GS = 4.5 V
8
10 V
2, 5, 10 A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
I_D = 30 A
20
V_GS
80
V_DD = 50 V
16
25 V
10 V
60
12
V_DS
40
8
20
V_DD = 50 V
4
25 V
10 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
75°C
10
25°C
3
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
30
tr
td(on)
10
3
1
0.1 0.3
tf
V_GS = 10 V, V_DD = 30 V
R_G = 10 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
Rev.5.00 Apr 05, 2006 page 4 of 7