HAT2266H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2266H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
5V
40 10 V
3.0 V
Pulse Test
2.8 V
30
20
2.6 V
10
V_GS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
100
2A
I_D = 10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00 Apr 05, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
10
1
DC
Operation in this
area is limited by
PW
=
Operation _Tc
1 _ms100
10 _ms
= _25°C
µ_s
R_DS(on)
0.1
Ta = 25°C
0.01 ^{1 shot Pulse}
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = –75°C
10
25°C
−25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
100
30
V_GS = 4.5 V
10
10 V
3
Pulse Test
1
1 3 10 30 100 300 1000
Drain Current I_D (A)