HAT2221C_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2221C
Static Drain to Source on State Resistance
vs. Temperature
400
Pulse Test
300
I_D = 0.5, 0.8 A
1.5 A
200
4.5 V
0.5, 0.8, 1.5 A
100
V_GS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
40
I_D = 1.5 A
V_DD
30
V_DD = 10 V
20 V
30 V
16
V_GS
12
20
8
10
4
V_DD = 30 V
20 V
10 V
0
0
0.8 1.6 2.4 3.2 4
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
10 V
6
V_GS = 0
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
1
25°C
75°C
0.1
V_DS = 10 V
Pulse Test
0.01 0.03 0.1 0.3 1 3 10
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
30
Coss
Crss
10
3
V_GS = 0
f = 1 MHz
1
0
5
10
15
20
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
td(off)
tr
10
td(on)
tf
V_GS = 4.5 V, V_DS = 10 V
Rg = 4.7 Ω
1
0.1
1
10
Drain Current I_D (A)
Rev.4.00 Feb 28, 2006 page 4 of 6