HAT2221C_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2221C
Main Characteristics
Power vs. Temperature Derating
1.0
Test Condition :
When using the glass epoxy board
0.8
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
0.6
0.4
0.2
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
Pulse Test
8
10 V
5V
6
4.5 V
4V
3.5 V
4
3V
2
2.5 V
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
1.5 A
0.8 A
100
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.4.00 Feb 28, 2006 page 3 of 6
Maximum Safe Operation Area
100
Ta = 25°C, 1shot pulse
30 ^{When using the FR4 board.}
10
10 µs
3
1
0.3
0.1
0.03
DC
Operation in this areaoperation
is limited by R_DS(on)
0.01
0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
25°C
6
–25°C
Tc = 75°C
4
2
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
V_GS = 4.5 V
100
10 V
10
0.01
0.1
1
10
Drain Current I_D (A)