HAT2207C_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2207C
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
300
200
V_GS = 2.5 V
I_D = 0.5, 0.8 A
1.5 A
100
0
–25
V_GS = 4.5 V
I_D = 0.5, 0.8, 1.5 A
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
40
8
I_D = 1.5 A
30
V_DD = 5 V
6
10 V
V_DS
20
20 V
4
V_GS
10
2
V_DD = 20 V
10 V
5V
0
0
0.4 0.8 1.2 1.6 2
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
2.5 V
5V
6
V_GS = 0 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
10
Tc = –25°C
1
25°C
75°C
0.1
0.1
V_DS = 10 V
Pulse Test
1
10
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
Coss
30
Crss
10
3 _{VGS = 0}
f = 1 MHz
1
0
10
20
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 4.5 V, V_DS = 10 V
Rg = 4.7 Ω
tr
100
td(off)
10
tf
td(on)
1
0.1
0.3
1
3
10
Drain Current I_D (A)
Rev.6.00 Feb 28, 2006 page 4 of 6