HAT2207C_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2207C
Main Characteristics
Power vs. Temperature Derating
1.0
Test Condition :
When using the glass epoxy board
0.8
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
0.6
0.4
0.2
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
Pulse Test
8
10 V _{4.5 V}
6
3V
4
2.5 V
2V
2
V_GS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
1.5 A
120
80
0.8 A
I_D = 0.5 A
40
Pulse Test
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
Rev.6.00 Feb 28, 2006 page 3 of 6
Maximum Safe Operation Area
100
Ta = 25°C, 1shot pulse
30 ^{When using the FR4 board.}
10
10 µs
3
1
0.3
0.1
0.03
DC
Operation in this aroepaeration
is limited by R_DS(on)
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
25°C
6
–25°C
Tc = 75°C
4
2
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
2.5 V
100
V_GS = 4.5 V
10
0.1
1
10
Drain Current I_D (A)