HAT2192WP_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2192WP
Dynamic Input Characteristics (Typical)
400
I_D = 10 A
Ta = 25 °C
300
200 ^VDS
V_DD = 200 V
100 V
50 V
16
V_GS
12
8
100
0
0
4
V_DD = 200 V
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3 ^ID ^{= 10 mA}
1 mA
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
V_GS = 0 V
Ta = 25 °C
16 ^{Pulse Test}
12
8
4
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
REJ03G0533-0200 Rev.2.00 Oct 09, 2009
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