HAT2192WP_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2192WP
Main Characteristics
Maximum Safe Operation Area
100
10
PW
10 _μs
= _{100 μs}
1
Operation in this
0.1
area is limited by
R_DS(on)
0.01
Ta = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
15
V_DS = 10 V
Pulse Test
10
Tc = 75°C
5
25°C
−25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.0
Pulse Test
V_GS = 10 V
0.8
0.6
I_D = 10 A
0.4
0.2
5A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
6V
6.2 V
7.5 V
Ta = 25°C
Pulse Test
5.7 V
6
4
5.4 V
2
V_GS = 5.1 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
0.1
V_GS = 10 V
Ta = 25°C
Pulse Test
0.01
1
10
100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ta = 25°C
1000
Ciss
100
Coss
10
V_GS = 0
f = 1 MHz
1
0
50
Crss
100
150
Drain to Source Voltage V_DS (V)
REJ03G0533-0200 Rev.2.00 Oct 09, 2009
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