HAT2185WP_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2185WP
Dynamic Input Characteristics (Typical)
240
I_D = 10 A
Ta = 25°C
16
V_GS
180
V_DS
120
12
V_DD = 30 V
60 V
120 V
8
60
V_DD = 120 V
4
60 V
30 V
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3
I_D = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
Pulse Test
Ta = 25 °C
16
12
8
10 V
5V
4
V_GS = 0, −5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
REJ03G1744-0200 Nov 28, 2008
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