HAT2185WP_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2185WP
Main Characteristics
Maximum Safe Operation Area
100
10
PW
10 _µs
= _{100 µs}
1
0.1
Operation in this
area is limited by
0.01 ^RDS(on)
Tc = 25°C
0.001 ^{1 shot}
0.1
1
10
100 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1
Pulse Test
V_GS = 10 V
0.8
0.6
0.4
I_D = 10 A
0.2
5A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1744-0200 Nov 28, 2008
Page 3 of 6
Typical Output Characteristics
20
Pulse Test
Ta = 25°C
16
7.6 V
8V
7V
9V
12 _{10 V}
6.6 V
8
6V
4
5.5 V
V_GS = 5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
Pulse Test
V_GS = 10 V
Ta = 25°C
0.1
0.01
1
10
100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage (Typical)
1000
Ciss
100
Coss
10
Crss
V_GS = 0
f = 1 MHz
Ta = 25°C
1
0
20 40 60 80 100
Drain to Source Voltage V_DS (V)