HAT2173H_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2173H
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I_D = 5 A, 10 A, 20 A
20
V_GS = 8 V
10
10 V
5 A, 10 A, 20 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
250
20
I_D = 25 A
V_GS
V_DD = 100 V
200
50 V
16
25 V
150
12
V_DD = 100 V
100
8
50 V
50
25 V
V_DS
0
20 40 60
4
0
80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
300
100
Tc = -25°C
30
10
75°C
3
25°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
tf
100
30 ^td(on)
td(off)
10
tr
3
1
0.1 0.2
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
Rev.2.00 Sep 26, 2005 page 4 of 7