HAT2173H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2173H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
8V
40 _{6.2 V}
Pulse Test _{6.0 V}
5.8 V
30
20
5.6 V
10
5.4 V
V_GS = 5.0 V
5.2 V
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
I_D = 50 A
200
20 A
100
10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 26, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
DC^P_O^W_pe=_ra11ti0o^m_nm^1s0_s^{0 µs 10 µs}
1
Operation in
this area is
0.1 ^{limited by RDS(on)}
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100 500
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
25°C
20
Tc = 75°C
-25°C
10
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 8 V
10
10 V
5
2
1
1
3
10
30
100
Drain Current I_D (A)