HAT2166H_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
6
I_D = 10 A, 20 A
50 A
V_GS = 4.5 V
4
2
10 V
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 45 A
40
30
V_DS
V_DD = 25 V
10 V
5V
V_GS ¹⁶
12
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
20
40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
300
100
Tc = -25°C
30
10
75°C
3
25°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
30
tf
td(on)
10
tr
3
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
Rev.6.00 Sep 20, 2005 page 4 of 7