HAT2166H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V Pulse Test
4.5 V
40
2.7 V
2.6 V
30
2.5 V
20
2.4 V
10
2.3 V
V_GS = 2.2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
I_D = 50 A
150
100
50
20 A
10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.6.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
DCPWOp=er1a10tiommnss100
10
µ_s
µ_s
1 _{Operation in}
this area is
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
10 _{Tc = 75°C}
25°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
V_GS = 4.5 V
10 V
2
1
1 3 10 30 100 300 1000
Drain Current I_D (A)