HAT2129H_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2129H
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
15
10
V_GS = 7 V
5
10 V
I_D = 20 A
5 A, 10 A
I_D = 5 A, 10 A, 20 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 30 A
40
30
V_DS
V_DD = 100 V
50 V
25 V
V_{GS 16}
12
20
8
10
V_DD = 100 V
4
50 V
25 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25°C
10
75°C
25°C
3
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20
30
40
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
td(off)
30
td(on)
tf
10 _tr
3
1
0.1 0.3
V_GS = 10 V , V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
Rev.5.00 Sep 20, 2005 page 4 of 7