HAT2129H_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2129H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.8 V
10 V
40 ^{7 V}
Pulse Test
V_GS = 4.6 V
30
4.2 V
20
10
3.8 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
I_D = 15 A
100
10 A
50
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
1000
100
10
1 _{Operation in}
DCPOWpe=ra11t0iommn1s0s01^µ0sµs
this area is
limited by R_DS(on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
-25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = 7 V
5
10 V
2
1
1 3 10 30 100 300 1000
Drain Current I_D (A)