HAT2088R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Silicon N Channel MOS FET

HAT2088R
Static Drain to Source on State Resistance
vs. Temperature
2.5
Pulse Test
V_GS = 10 V
2.0
1.5
1.0
I_D = 8 A
0.5
0
–40 0
2A
5A
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
I_D = 2 A
400
V_DD = 160 V
300
100 V
50 V
200 V_DS
16
12
V_GS
8
100
0
0
V_DD = 160 V
4
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = –25°C
5
2
75°C
1
25°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50
Drain Current I_D (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
200
100
Coss
50
20
Crss
10
5
0
20 40 60 80 100
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 100 V
200
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
100
td(off)
50
td(on)
20
10 _tr
5
tf
2
1
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6