FY7BFH-02E_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
0.4
ID = 14A
0.2
0
0
7A
3A
1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
TC = 25°C
VDS = 10V
Pulse Test
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
2
Ciss
10³
Coss
7
5
3
Crss
2
10²
7
5
3 ^{TCh = 25°C}
2 f = 1MHZ
VGS = 0V
10¹_{10–1 2 3 5 7 100 2 3}
5 7 10¹ 2 3
5 7 10²
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
40
VGS = 2.5V
20
4V
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
7
5
3
TC = 25°C
2
75°C
10¹
7
125°C
5
3
2
10⁰
7
5
3
2
10^–1
5
7 10⁰
23
VDS = 10V
Pulse Test
5 7 10¹ 2 3 5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
10²
7
5
3
2
10¹
7
5
10^–1 2 3
td(off)
tf
tr
td(on)
TCh = 25°C
VDD = 10V
VGS = 4V
RGEN = RGS = 50Ω
5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
Sep. 2001