FY7BFH-02E_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3.5A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.8A, VGS = 0V
Channel to ambient
IS = 1.8A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
20
—
—
V
±10
—
—
V
—
—
±10
µA
—
—
0.1
mA
0.5
0.9
1.3
V
—
23
30
mΩ
—
30
40
mΩ
—
0.161 0.210 V
—
16
—
S
—
1400
—
pF
—
520
—
pF
—
400
—
pF
—
30
—
ns
—
100
—
ns
—
190
—
ns
—
190
—
ns
—
0.85
1.1
V
—
—
78.1 °C/W
—
50
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
tw =
10µs
3
2
100µs
10¹
7
5
1ms
3
2
10ms
10⁰
7
5
3
2 ^{TC = 25°C}
Single Pulse
10^–1
7
2 3 5 7 10⁰
23
5 7 10¹
100ms
DC
23 5
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 5V
2V
4V
16
3V
2.5V
TC = 25°C
Pulse Test
12
8
1.5V
4
PD = 1.6W
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V
4V
8
3V
2.5V
2V
TC = 25°C
Pulse Test
1.5V
6
4
PD = 1.6W
2
0
0 0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001