BCR5KM_15 Datasheet, PDF (6/13 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
10²
7
5
3
VGM = 10V
2
10¹
7
PGM = 3W
5
3 _{VGT = 1.5V}
2
Tj = 25°C
10⁰
7
IGT = 15mA
5
IGM = 2A
3
PGM = 0.3W
2
VGD = 0.2V
10^–1_{101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104}
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10²
7
5
4
3
2
10¹
7
5
4
3
2
10⁰
10² 2 3 5 7 10³ 2 3 5 7 10⁴ 2 3 5 7 10⁵
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
IRGT III
3
2
10²
7 ^{IFGT I}
5
4
3
2
IRGT I
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2 3 5 7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
10
9
8 _360°
7 ^CONDUCTION
RESISTIVE,
6 _INDUCTIVE
5 LOADS
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
RMS ON-STATE CURRENT (A)
Mar. 2002