BCR5KM_15 Datasheet, PDF (13/13 Pages) Renesas Technology Corp – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
Tj = 125°C
140
120
100
III QUADRANT
80
60
40 I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
Tj = 125°C
140
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
7
IRGT III ^{TYPICAL EXAMPLE}
5
4
3
2 IRGT I
10²
7 IFGT I
5
4
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
GATE TRIGGER PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
LOAD
C1
R1
C0 R0
C1 = 0.1~0.47µF
R1 = 47~100Ω
C0 = 0.1µF
R0 = 100Ω
Mar. 2002