BB506C_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506C
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–.2
–.4
–.6
–.8 _–1
–10
–5
–4
–3
–2
–1.5
Test condition: VDS = 5 V, VG1 = 5 V,
V_GS2 = 4 V, R_G = 100 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
Preliminary
S21 Parameter vs. Frequency
90°
Scale: 5 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test condition: VDS = 5 V, VG1 = 5 V,
V_GS2 = 4 V, R_G = 100 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
S12 Parameter vs. Frequency
90°
Scale: 0.05 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test condition: VDS = 5 V, VG1 = 5 V,
V_GS2 = 4 V, R_G = 100 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5
–.2
–.4
–.6
–.8 _–1
–10
–5
–4
–3
–2
–1.5
Test condition: VDS = 5 V, VG1 = 5 V,
V_GS2 = 4 V, R_G = 100 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
R07DS0288EJ0300 Rev.3.00
Jan 10, 2014
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