BB506C_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506C
Power Gain vs. Gate Resistance
50
V_DS = 5 V
V_G1 = 5 V
40
V_G2S = 4 V
f = 900 MHz
30
20
10
0
10
100
1000
Gate Resistance R_G (kΩ)
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
V_DS = 5 V
5
V_G1 =5 V
R_G = 100 kΩ
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
40
35
V_DS = 5 V
V_G1 = 5 V
30
R_G = 100 kΩ
f = 900 MHz
25
20
15
10
5
0
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Preliminary
Noise Figure vs. Gate Resistance
5
V_DS = 5 V
V_G1 = 5 V
4
V_G2S = 4 V
f = 900 MHz
3
2
1
0
10
100
1000
Gate Resistance R_G (kΩ)
Noise Figure vs.
5
Gate2 to Source Voltage
V_DS = 5 V
V_G1 = 5 V
4
R_G = 100 kΩ
f = 900 MHz
3
2
1
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
R07DS0288EJ0300 Rev.3.00
Jan 10, 2014
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