BB501M Datasheet, PDF (6/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501M
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 47 kΩ
24 _{f = 1 kHz}
18
4V
3V
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
30
25
20
15
10
V_DS = V_G1 = 5 V
V_G2S = 4 V
f = 900 MHz
5
0
10
20
50
100
Gate Resistance R_G (kΩ)
Power Gain vs. Drain Current
30
25
20
15
10 ^{VDS = VG1 = 5 V}
V_G2S = 4 V
5
R_G = variable
f = 900 MHz
0
0
5
10
15
20
Drain Current I_D (mA)
Rev.6.00 Aug 10, 2005 page 6 of 10
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 68 kΩ
24 _{f = 1 kHz}
18
4V
3V
2V
12
6
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
3
2
1
V_DS = V_G1 = 5 V
V_G2S = 4 V
f = 900 MHz
0
10
20
50
100
Gate Resistance R_G (kΩ)
Noise Figure vs. Drain Current
4
3
2
V_DS = V_G1 = 5 V
1 ^{VG2S = 4 V}
R_G = variable
f = 900 MHz
0
0
5
10
15
20
Drain Current I_D (mA)