2SJ649_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

2SJ649
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–80
–60
VGS = –10 V
–40
–4.5 V
–4.0 V
–20
Pulsed
00
–1
–2
–3
–4
–5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
–10
–1
TA = −55˚C
25˚C
75˚C
125˚C
–0.1
–0.01
–1
VDS = –10 V
Pulsed
–2
–3
–4
–5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
–4.0
VDS = –10 V
ID = –1 mA
–3.0
–2.0
–1.0
0
–50
0
50
100 150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
0.01
–0.01
TA = 125˚C
75˚C
25˚C
−55˚C
VDS = –10 V
Pulsed
–0.1
–1
–10
–100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
Pulsed
100
80
VGS = –4.0 V
60
–4.5 V
–10 V
40
20
0
–0.1
–1
–10
–100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
70
60
50
40
ID = −10 A
30
20
10
Pulsed
0
0 - 2 - 4 - 6 - 8 - 10 - 12 - 14 - 16 - 18 - 20
VGS - Gate to Source Voltage - V
4
Data Sheet D16332EJ1V0DS