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2SJ649_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET | |||
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2SJ649
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Condtions
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
VDS = â60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = â10 V, ID = â1 mA
VDS = â10 V, ID = â10 A
VGS = â10 V, ID = â10 A
RDS(on)2 VGS = â4.0 V, ID = â10 A
Input Capacitance
Ciss
VDS = â10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = â30 V, ID = â10 A
Rise Time
tr
VGS = â10 V
Turn-off Delay Time
td(off)
RG = 0 â¦
Fall Time
tf
Total Gate Charge
QG
VDD = â48 V
Gate to Source Charge
QGS
VGS = â10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = â20 A
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
Reverse Recovery Charge
Qrr
Note Pulsed: PW ⤠350 µs, Duty Cycle ⤠2%
di/dt = 100 A/µs
MIN. TYP. MAX. Unit
â10 µA
m 10 µA
â1.5 â2.0 â2.5
V
10 20
S
38 48
mâ¦
47 75
mâ¦
1900
pF
350
pF
140
pF
10
ns
10
ns
73
ns
17
ns
38
nC
7
nC
10
nC
0.95
V
49
ns
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 â¦
L
PG
50 â¦
VDD
VGS = â20 â 0 V
â
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS (â)
0
Ï
Ï = 1 µs
Duty Cycle ⤠1%
RL
VDD
VGS (â)
VGS
Wave Form
0 10%
VDS (â)
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = â2 mA
RL
PG.
50 â¦
VDD
2
Data Sheet D16332EJ1V0DS
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