2SJ606_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

2SJ606
FORWARD TRANSFER CHARACTERISTICS
−1000
−100
−10
−1
−0.1
−1
TA = −55˚C
25˚C
75˚C
150˚C
VDS = −10 V
Pulsed
−2
−3
−4
−5
VGS - Gate to Source Voltage - V
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
−0.01
TA = 150˚C
75˚C
25˚C
−55˚C
VDS = −10 V
Pulsed
−0.1
−1
−10
−100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
40
30
VGS = −4.0 V
−4.5 V
−10 V
20
10
0
−1
−10
−100
−1000
ID - Drain Current - A
−250
−200
−150
−100
−50
00
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = −10 V
−4.0 V
Pulsed
−1
−2
−3
−4
−5
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
ID = −83 A
−42 A
15
−17 A
10
5
0
0
−5
−10
−15
−20
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−4.0
VDS = −10 V
ID = −1 mA
−3.0
−2.0
−1.0
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
4
Data Sheet D14654EJ3V0DS