2SJ606_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

2SJ606
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−1000
−100
−10
R^{DS(on) Limited}
ID(DC)
LimPiotewder
10 _ms
DissipatioDn _C
ID(pulse) _PW
100 _µs ^{= 10} _µs
1 _ms
TC = 25˚C
Single Pulse
−1
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3˚C/W
1
Rth(ch-C) = 1.04˚C/W
0.1
0.01
10 µ
100 µ 1 m
10 m 100 m
1
Single Pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D14654EJ3V0DS
3