2SJ598_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

2SJ598
FORWARD TRANSFER CHARACTERISTICS
–100
–10
–1
TA = −55˚C
25˚C
75˚C
150˚C
–0.1
–0.01
–1
VDS = –10 V
Pulsed
–2
–3
–4
–5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
0.01
–0.01
TA = 150˚C
75˚C
25˚C
−50˚C
VDS = –10 V
Pulsed
–0.1
–1
–10
–100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300
Pulsed
200
VGS = –4.0 V
–4.5 V
–10 V
100
0
–0.1
–1
–10
–100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–50
–40
–30
VGS = –10 V
–20
–4.0 V
–10
Pulsed
00
–2
–4
–6
–8 –10
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
100
ID = –6 A
50
0
0
–5
–10
–15
–20
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
–4.0
VDS = –10 V
ID = –1 mA
–3.0
–2.0
–1.0
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14656EJ5V0DS