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2SJ598_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET
2SJ598
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
–10
RDS(on) Limited
ID(pulse) PW
100 μs = 10 μs
ID(DC)
LimPiotewder
10
DissipationDC
1
ms
ms
–1
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TC = 25˚C
Single Pulse
–0.1
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125˚C/W
10
Rth(ch-C) = 5.43˚C/W
1
0.1
0.01
10μ
100 μ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
Data Sheet D14656EJ5V0DS
3