2SC4094_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17 _500.302.18
ONENT
0.4
0.6
3.0
0.8
2 GHz
1.0
4.0
6.0
S11e
0.1
0.2
0.3
0.4
IC = 20 mA
REACTANCE COMPONENT
( ) ––R––
ZO
0.2
0.4
IC = 20 mA
2 GH^0.6z
0.8
IC = 5 mA
10
20
50
S22e
0.2 GHz
0.2 GHz
IC = 5 mA
2SC4094
S21e-FREQUENCY
CONDITION VCE = 8 V
IC = 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
120°
IC = 20 mA
60°
0.2 GHz
150°
IC = 5 mA
180°
S21e
30°
150°
2GHz
04 8
12 16 20 ^{0° 180°}
S12e-FREQUENCY
CONDITION VCE = 8 V
IC = 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
90°
120°
60°
IC = 20 mA
2GHz
30°
S12e
0.2 GHz
0
IC = 5 mA
0.04 0.08 0.12 0.16 0.2 ^0°
−150°
−120°
−90°
−30°
−150°
−60°
−120°
−90°
−30°
−60°
4