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2SC4094_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |||
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7
6
5
4
3
2
1
0
0.5 1
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 8 V
f = 1.0 GHz
5 10
IC-Collector Current-mA
50 70
S-PARAMETER
VCE = 8.0 V, IC = 5.0 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.774
0.631
0.523
0.460
0.426
0.416
0.417
0.430
0.443
0.458
S11
47.8
88.8
120.9
145.1
166.6
178.2
163.0
152.1
142.1
136.5
S21
12.689
9.952
7.813
5.966
4.841
4.065
3.413
3.035
2.659
2.482
S21
146.5
119.4
100.9
87.6
76.7
68.8
60.7
54.1
48.0
44.3
S12
0.031
0.048
0.058
0.067
0.074
0.083
0.087
0.098
0.105
0.114
S12
65.4
53.4
46.2
43.9
43.8
43.5
41.2
42.8
40.1
43.0
VCE = 8.0 V, IC = 20.0 mA, ZO = 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.461
0.364
0.338
0.330
0.334
0.344
0.359
0.383
0.401
0.419
S11
89.8
135.8
163.4
177.9
163.2
153.9
143.1
136.1
128.3
124.7
S21
23.331
13.501
9.535
7.083
5.604
4.722
3.982
3.517
3.094
2.882
S21
121.6
99.2
86.4
77.5
69.3
63.5
56.8
51.1
45.6
42.7
S12
0.021
0.033
0.046
0.056
0.070
0.084
0.091
0.104
0.116
0.127
S12
60.7
61.2
61.5
62.1
60.0
60.4
54.9
54.5
49.9
50.8
2SC4094
S22
0.882
0.723
0.611
0.564
0.515
0.488
0.459
0.443
0.428
0.414
S22
19.1
29.5
33.4
34.5
37.6
39.6
44.1
45.9
51.1
53.5
S22
0.665
0.511
0.448
0.430
0.402
0.385
0.362
0.350
0.337
0.323
S22
27.7
30.5
29.5
29.5
32.5
34.8
39.5
42.1
47.4
50.5
3
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