RJK60S8DPK-M0 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 600V - 110A - SJ MOS FET High Speed Power Switching

RJK60S8DPK-M0
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
800
700
600
500
I_D = 10 mA
V_GS = 0
400
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS0644EJ0100Rev.1.00
Apr 23, 2012
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