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| RJK60S8DPK-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 110A - SJ MOS FET High Speed Power Switching | |||
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Preliminary Datasheet
RJK60S8DPK-M0
600V - 110A - SJ MOS FET
High Speed Power Switching
R07DS0644EJ0100
Rev.1.00
Apr 23, 2012
Features
ï· Superjunction MOSFET
ï· Low on-resistance
RDS(on) = 0.045 ï typ. (at ID = 27.5 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
tf = 42 ns typ. (at ID = 27.5 A, VGS = 10 V, RL = 10.9 ï, Rg = 10 ï, Ta = 25ï°C)
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name:TO-3PSG)
D
4
1
23
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Ta = 25ï°C
Ta = 100ï°C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID Note1
ID Note1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
Pch Note2
ï±ch-c
Tch
Tstg
Ratings
600
+30, ï20
55
34.8
110
55
110
416.6
0.3
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS0644EJ0100Rev.1.00
Apr 23, 2012
Page 1 of 6
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