RJK4002DPP-M0_12 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 400V - 3A - MOS FET High Speed Power Switching

RJK4002DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.5
0.2
0.1
0.1
0.0⁵
0^.02
0.01
0^.01
1^shot
p^ulse
0.001
10 μ
100 μ
Tc = 25°C
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 6.25°C/W, Tc = 25°C}
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
10
100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(o_ff)
t_f
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
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