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RJK4002DPP-M0_12 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 400V - 3A - MOS FET High Speed Power Switching | |||
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RJK4002DPP-M0
400V - 3A - MOS FET
High Speed Power Switching
Features
ï· Low on-state resistance
RDS(on) = 2.4 ï typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25ï°C)
ï· High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
ID Note4
ID(pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR(pulse) Note1
IAPNote3
EARNote3
Pch Note 2
Channel to case thermal Impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ms, duty cycle ï£ 1 %
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
4. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0551EJ0200
Rev.2.00
Aug 03, 2012
D
1. Gate
2. Drain
3. Source
S
Value
400
ï±30
3
6
3
6
2.5
0.357
20
6.25
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
Aï
Aï
A
mJï
W
ï°C/W
ï°C
ï°C
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 1 of 6
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