RJK1008DPP-E0 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – N-Channel Power MOSFET High-Speed Switching Use

RJK1008DPP-E0
Reverse Drain Current vs.
Source to Drain Voltage
100
80
10 V
Pulse Test
60
5V
40
V_GS = 0 V, -5 V
20
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Avalanche Current vs.Case Temperature
50
L = 100 μH
40
30
20
10
0
25 50 75 100 125 150 175 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10.0
3
D=1
1
0.5
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
0.01
0.01
100 μ
1shot pulse
1m
θch – c(t) = γs (t) • θch – c
θch – c = 2.78°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
25 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 80 V
Waveform
90%
Vin ^10%
Vout 10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS0798EJ0100 Rev.1.00
Jun 08, 2012
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