RJK1008DPP-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel Power MOSFET High-Speed Switching Use

RJK1008DPP-E0
N-Channel Power MOSFET
High-Speed Switching Use
Features
 V_DSS : 100 V
 R_DS(on) : 11 m (Max)
 I_D : 80 A
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1G
1
23
Preliminary Datasheet
R07DS0798EJ0100
Rev.1.00
Jun 08, 2012
2
D
1. Gate
2. Drain
3. Source
S
3
Application
 Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25C
2. STch = 25C, Tch  150C, L = 100 H
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)}
I_DR
I_{DR (pulse)}
I_AP ^Note2
Pch ^Note1
ch-c
Tch
Tstg
Ratings
100
±20
80
160
80
160
40
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS0798EJ0100 Rev.1.00
Jun 08, 2012
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