RJK0362DSP Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0362DSP
10
Normalized Transient Thermal Impedance vs. Pulse Width
Vin
15 V
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01 _{1shot pulse}
0.0001
10 µ 100 µ 1 m
Avalanche Test Circuit
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
Avalanche Waveform
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D. U. T
V_DD
E_AR =
1
2
L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
REJ03G1653-0501 Rev.5.01 Apr 24, 2008
Page 5 of 6