RJK0354DSP_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0354DSP
10
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
D=1
1
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch – f(t) = γs (t) • θch – f
θch – f = 85°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
L
I_AP
Monitor
D. U. T
V_DD
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Avalanche Waveform
E_AR =
1
2
L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
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