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RJK0354DSP_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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RJK0354DSP
Silicon N Channel Power MOS FET
Power Switching
Features
ï· Capable of 4.5 V gate drive
ï· Low drive current
ï· High density mounting
ï· Low on-resistance
RDS(on) = 5.4 mï typ. (at VGS = 10 V)
ï· Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
Preliminary Datasheet
REJ03G1661-0200
Rev.2.00
Apr 05, 2010
5678
DDDD
SSS
123
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
16
128
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
ï±ch-a Note3
16
15
22.5
2.0
62.5
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tch = 25ï°C, Rg ï³ 50 ï
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ï£ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 1 of 6
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