RJK0330DPB-01_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK0330DPB-01
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 _0.1
0^.05
0.03
0^.02
0^.011shot
pu^lse
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 2.27°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D. U. T
V_DD
Avalanche Waveform
E_AR =
1
2
L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr
td(off)
tf
R07DS0266EJ0500 Rev.5.00
Mar 01, 2011
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