RJH60F6BDPQ-A0_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – 600V - 45A - IGBT High Speed Power Switching

RJH60F6BDPQ-A0
Switching Characteristics (Typical) (1)
1000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 150°C
t_f
td(o_ff)
100
td(on)
tr
tr includes the diode recovery
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Ta = 150 °C
td(o_ff)
100
t_f
tr
td(on)
tr includes the diode recovery
10
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 5 Ω
td(o_{ff) tr}
100
t_f
td(on)
tr includes the diode recovery
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 25°C
1000
Eoff
100
Eon
Eon includes the diode recovery
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Ta = 150 °C
Eoff
1000
Eon
Eon includes the diode recovery
100
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 5 Ω
Eon
1000
Eoff
Eon includes the diode recovery
100
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
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