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| RJH60F6BDPQ-A0_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 600V - 45A - IGBT High Speed Power Switching | |||
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Preliminary Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT
High Speed Power Switching
R07DS0632EJ0100
Rev.1.00
Feb 17, 2012
Features
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ï£ 5 ïs, duty cycle ï£ 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
ï±j-c
ï±j-cd
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
1.1
150
â55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 1 of 8
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