RJH60F0DPQ-A0 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F0DPQ-A0
Switching Characteristics (Typical) (1)
1000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
200
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 5 Ω
160 tr includes the diode recovery
120
tr
80 ^tf
td(off)
40 _td(on)
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100000
10000
V_CC = 400 V, V_GE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
1000
100
10
1
Eoff
Eon
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
1200
Eoff
800
Eon
400
V_CC = 400 V, V_GE = 15 V
I_C = 30 A, Rg = 5 Ω
Eon includes the diode recovery
0
0 25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Page 5 of 7