RJH60F0DPQ-A0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

Preliminary Datasheet
RJH60F0DPQ-A0
Silicon N Channel IGBT
High Speed Power Switching
R07DS0324EJ0100
Rev.1.00
Apr 06, 2011
Features
• Low collector to emitter saturation voltage
V_CE(sat) = 1.4 V typ. (at I_C = 25 A, V_GE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench gate and thin wafer technology
• High speed switching
t_f = 90 ns typ. (at I_C = 30 A, V_CC = 400 V, V_GE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
Symbol
V_CES
V_GES
I_C ^Note1
I_C ^Note1
ic(peak) ^Note1
i_DF(peak) ^Note2
P_C
θj-c
Tj
Tstg
Ratings
600
±30
50
25
100
100
201.6
0.62
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
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